All MOSFET. TPD65R600C Datasheet

 

TPD65R600C Datasheet and Replacement


   Type Designator: TPD65R600C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: TO252
 

 TPD65R600C substitution

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TPD65R600C Datasheet (PDF)

 ..1. Size:741K  cn wuxi unigroup
tpp65r600c tpa65r600c tpu65r600c tpd65r600c tpc65r600c tpb65r600c.pdf pdf_icon

TPD65R600C

TPP65R600C, TPA65R600C, TPU65R600C, TPD65R600C, TPC65R600C, TPB65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 5.1. Size:421K  cn wuxi unigroup
tpd65r600m.pdf pdf_icon

TPD65R600C

TPD65R600M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 5.2. Size:902K  cn wuxi unigroup
tpa65r600m tpb65r600m tpd65r600m tpu65r600m.pdf pdf_icon

TPD65R600C

TPA65R600M,TPB65R600M,TPD65R600M,TPU65R600MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de

 8.1. Size:473K  cn wuxi unigroup
tpd65r520d.pdf pdf_icon

TPD65R600C

TPD65R520D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

Datasheet: TPA65R380C , TPU65R380C , TPD65R380C , TPC65R380C , TPB65R380C , TPP65R600C , TPA65R600C , TPU65R600C , IRFZ46N , TPC65R600C , TPB65R600C , TPP65R940C , TPA65R940C , TPU65R940C , TPD65R940C , TPC65R940C , TPB65R940C .

History: RXH090N03 | FHP20N60A | MSD2N70 | UTT6NP10G-S08-R | SIA537EDJ | GSM8459 | QM2N7002E3K1

Keywords - TPD65R600C MOSFET datasheet

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 TPD65R600C equivalent finder
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