TPD65R600C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPD65R600C
Маркировка: 65R600C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 63 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 14.5 nC
trⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 31 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.62 Ohm
Тип корпуса: TO252
Аналог (замена) для TPD65R600C
TPD65R600C Datasheet (PDF)
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Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HGD080N10A | AOSP66406 | SISA01DN | STS8202 | IPW60R299CP | TPU65R940C
History: HGD080N10A | AOSP66406 | SISA01DN | STS8202 | IPW60R299CP | TPU65R940C
Список транзисторов
Обновления
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