All MOSFET. TPV65R080C Datasheet

 

TPV65R080C MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPV65R080C
   Marking Code: 65R080C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO3PN

 TPV65R080C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPV65R080C Datasheet (PDF)

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