TPV65R080C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPV65R080C
Маркировка: 65R080C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 390 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 90 nC
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 225 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: TO3PN
Аналог (замена) для TPV65R080C
TPV65R080C Datasheet (PDF)
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Список транзисторов
Обновления
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