TPV65R080C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPV65R080C
Маркировка: 65R080C
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 390 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 47 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 90 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 225 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
Тип корпуса: TO3PN
Аналог (замена) для TPV65R080C
TPV65R080C Datasheet (PDF)
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