TSD120N10AT Specs and Replacement

Type Designator: TSD120N10AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 201 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252

TSD120N10AT substitution

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TSD120N10AT datasheet

 ..1. Size:692K  cn wuxi unigroup
 tsd120n10at tsp120n10at tsg120n10at.pdf pdf_icon

TSD120N10AT

TSD120N10AT,TSP120N10AT,TSG120N10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V N-Channel SGT MOSFET General Description Product Summary VDS 100V l Trench Power SGT technology ID (at VGS =10V) 55A l Very low on-resistance RDS(ON) RDS(ON) (at VGS =10V) ... See More ⇒

 9.1. Size:473K  cn wuxi unigroup
 tsd12n06at.pdf pdf_icon

TSD120N10AT

TSD12N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa... See More ⇒

Detailed specifications: TPW65R190MFD, TPW70R100MFD, TPW80R200MFD, TPW80R300MFD, TPY70R1K5MB, TSB15N06A, TSB15N10A, TSD10N06AT, IRF540, TSP120N10AT, TSG120N10AT, TSD12N06AT, TSG017N045AT, TSG10N06AT, TSG12N06AT, TSG12N10AT, TSJ10N06AT

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