TSD120N10AT Datasheet and Replacement
Type Designator: TSD120N10AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 55 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 201 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
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TSD120N10AT Datasheet (PDF)
tsd120n10at tsp120n10at tsg120n10at.pdf

TSD120N10AT,TSP120N10AT,TSG120N10ATWuxi Unigroup Microelectronics CO.,LTD.100V N-Channel SGT MOSFETGeneral DescriptionProduct SummaryVDS 100V l Trench Power SGT technologyID (at VGS =10V) 55Al Very low on-resistance RDS(ON)RDS(ON) (at VGS =10V)
tsd12n06at.pdf

TSD12N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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History: TK2P60D | IRFBG20



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