FDB8444F085 Datasheet and Replacement
Type Designator: FDB8444F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO263 D2PAK
FDB8444F085 substitution
FDB8444F085 Datasheet (PDF)
fdb8444ts.pdf

August 2007FDB8444TStmN-Channel PowerTrench MOSFET with Temperature Sensor40V, 70A, 5m Features Applications Typ rDS(on) = 3.8m at VGS = 10V, ID = 70A Automotive Engine Control Typ Qg(TOT) = 130nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse and Repetitive Pul
fdb8444.pdf

February 2006FDB8444N-Channel PowerTrench MOSFET40V, 70A, 5.5m Features Applications Automotive Engine Control Typ rDS(on) = 3.9m at VGS = 10V, ID = 70A Powertrain Management Typ Qg(TOT) = 91nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Transmission Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single Pul
fdb8444 f085.pdf

October 2010FDB8444_F085N-Channel PowerTrench MOSFET40V, 70A, 5.5m Features Applications Automotive Engine Control Typ rDS(on) = 3.9m at VGS = 10V, ID = 70A Powertrain Management Typ Qg(TOT) = 91nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Transmission Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single P
Datasheet: STU312D , FDB8441 , FDB8441F085 , FDB8442 , FDB8442F085 , FDB8443 , FDB8443F085 , FDB8444 , IRFB31N20D , FDB8445 , FDB8445F085 , FDB8447L , FDB8453LZ , FDB8832 , STU313D , FDB8832F085 , STU314D .
Keywords - FDB8444F085 MOSFET datasheet
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History: RU6H1L | SVF2N60M



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