TSP15N10A Specs and Replacement

Type Designator: TSP15N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO220

TSP15N10A substitution

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TSP15N10A datasheet

 ..1. Size:496K  cn wuxi unigroup
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TSP15N10A

TSP15N10A Wuxi Unigroup Microelectronics Co.,Ltd. 100V N-Channel DTMOS General Description Product Summary Trench Power SGT technology VDS 100V Very low on-resistance RDS(ON) ID (at VGS=10V) 150A Low Gate Charge Excellent Gate Charge x RDS(ON) Product RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:442K  cn wuxi unigroup
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TSP15N10A

TSP15N06A Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS Technology Low RDS(ON) Low Gate Charge Optimized for fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pac... See More ⇒

Detailed specifications: TSD12N06AT, TSG017N045AT, TSG10N06AT, TSG12N06AT, TSG12N10AT, TSJ10N06AT, TSJ10N10AT, TSP15N06A, IRFB4227, TTB105N06A, TTP105N06A, TTB105N08A, TTP105N08A, TTB115N08A, TTP115N08A, TTB115N08AA, TTP115N08AA

Keywords - TSP15N10A MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs