All MOSFET. TSP15N10A Datasheet

 

TSP15N10A Datasheet and Replacement


   Type Designator: TSP15N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO220
 

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TSP15N10A Datasheet (PDF)

 ..1. Size:496K  cn wuxi unigroup
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TSP15N10A

TSP15N10A Wuxi Unigroup Microelectronics Co.,Ltd. 100V N-Channel DTMOS General Description Product Summary Trench Power SGT technology VDS 100V Very low on-resistance RDS(ON) ID (at VGS=10V) 150A Low Gate Charge Excellent Gate Charge x RDS(ON) Product RDS(ON) (at VGS=10V)

 8.1. Size:442K  cn wuxi unigroup
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TSP15N10A

TSP15N06A Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS Technology Low RDS(ON) Low Gate Charge Optimized for fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pac

Datasheet: TSD12N06AT , TSG017N045AT , TSG10N06AT , TSG12N06AT , TSG12N10AT , TSJ10N06AT , TSJ10N10AT , TSP15N06A , AON6414A , TTB105N06A , TTP105N06A , TTB105N08A , TTP105N08A , TTB115N08A , TTP115N08A , TTB115N08AA , TTP115N08AA .

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