All MOSFET. TTB118N08A Datasheet

 

TTB118N08A Datasheet and Replacement


   Type Designator: TTB118N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 217 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 105 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 328 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO263
 

 TTB118N08A substitution

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TTB118N08A Datasheet (PDF)

 ..1. Size:790K  cn wuxi unigroup
 ttb118n08a ttp118n08a.pdf pdf_icon

TTB118N08A

TTB118N08A,TTP118N08A Wuxi Unigroup Microelectronics CO.,LTD. 82V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 82V Low RDS(ON) ID (at VGS =10V) 118A Low Gate Charge RDS(ON) (at VGS =10V)

 9.1. Size:445K  cn wuxi unigroup
 ttb115n08a ttp115n08a.pdf pdf_icon

TTB118N08A

TTB115N08A,TTP115N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)

 9.2. Size:811K  cn wuxi unigroup
 ttb115n08aa ttp115n08aa.pdf pdf_icon

TTB118N08A

TTB115N08AA,TTP115N08AA Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 85V Low RDS(ON) ID (at VGS =10V) 115A Low Gate Charge RDS(ON) (at VGS =10V)

Datasheet: TTB105N06A , TTP105N06A , TTB105N08A , TTP105N08A , TTB115N08A , TTP115N08A , TTB115N08AA , TTP115N08AA , IRFP250N , TTP118N08A , TTB135N68A , TTP135N68A , TTB145N06A , TTP145N06A , TTB145N08A , TTP145N08A , TTB30P10AT .

History: SIR472ADP | 3SK144Q | 3SK143P | SST4118 | RJK4034DJE | SIR462DP | NP34N055SHE

Keywords - TTB118N08A MOSFET datasheet

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