TTB118N08A Specs and Replacement

Type Designator: TTB118N08A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 217 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 328 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO263

TTB118N08A substitution

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TTB118N08A datasheet

 ..1. Size:790K  cn wuxi unigroup
 ttb118n08a ttp118n08a.pdf pdf_icon

TTB118N08A

TTB118N08A,TTP118N08A Wuxi Unigroup Microelectronics CO.,LTD. 82V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 82V Low RDS(ON) ID (at VGS =10V) 118A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

 9.1. Size:445K  cn wuxi unigroup
 ttb115n08a ttp115n08a.pdf pdf_icon

TTB118N08A

TTB115N08A,TTP115N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:811K  cn wuxi unigroup
 ttb115n08aa ttp115n08aa.pdf pdf_icon

TTB118N08A

TTB115N08AA,TTP115N08AA Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 85V Low RDS(ON) ID (at VGS =10V) 115A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TTB105N06A, TTP105N06A, TTB105N08A, TTP105N08A, TTB115N08A, TTP115N08A, TTB115N08AA, TTP115N08AA, IRFP250N, TTP118N08A, TTB135N68A, TTP135N68A, TTB145N06A, TTP145N06A, TTB145N08A, TTP145N08A, TTB30P10AT

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