All MOSFET. TTB145N06A Datasheet

 

TTB145N06A Datasheet and Replacement


   Type Designator: TTB145N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 217 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 105 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 481 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO263
 

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TTB145N06A Datasheet (PDF)

 ..1. Size:826K  cn wuxi unigroup
 ttb145n06a ttp145n06a.pdf pdf_icon

TTB145N06A

TTB145N06A,TTP145N06A Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) ID (at VGS =10V) 145A Low Gate Charge RDS(ON) (at VGS =10V)

 6.1. Size:362K  cn wuxi unigroup
 ttb145n08a ttp145n08a.pdf pdf_icon

TTB145N06A

TTB145N08A,TTP145N08A Wuxi Unigroup Microelectronics Co.,Ltd 80V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits

Datasheet: TTB115N08A , TTP115N08A , TTB115N08AA , TTP115N08AA , TTB118N08A , TTP118N08A , TTB135N68A , TTP135N68A , IRFP260 , TTP145N06A , TTB145N08A , TTP145N08A , TTB30P10AT , TTD30P10AT , TTP30P10AT , TTB85N08A , TTP85N08A .

History: TTJ12P03AT | UF640G-TQ2-R | TTG65N10A

Keywords - TTB145N06A MOSFET datasheet

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