TTB145N06A Specs and Replacement

Type Designator: TTB145N06A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 217 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 481 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: TO263

TTB145N06A substitution

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TTB145N06A datasheet

 ..1. Size:826K  cn wuxi unigroup
 ttb145n06a ttp145n06a.pdf pdf_icon

TTB145N06A

TTB145N06A,TTP145N06A Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) ID (at VGS =10V) 145A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

 6.1. Size:362K  cn wuxi unigroup
 ttb145n08a ttp145n08a.pdf pdf_icon

TTB145N06A

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Detailed specifications: TTB115N08A, TTP115N08A, TTB115N08AA, TTP115N08AA, TTB118N08A, TTP118N08A, TTB135N68A, TTP135N68A, 2SK3878, TTP145N06A, TTB145N08A, TTP145N08A, TTB30P10AT, TTD30P10AT, TTP30P10AT, TTB85N08A, TTP85N08A

Keywords - TTB145N06A MOSFET specs

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