TTB30P10AT Specs and Replacement

Type Designator: TTB30P10AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 625 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: TO263

TTB30P10AT substitution

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TTB30P10AT datasheet

 ..1. Size:798K  cn wuxi unigroup
 ttb30p10at ttd30p10at ttp30p10at.pdf pdf_icon

TTB30P10AT

TTB30P10AT,TTD30P10AT,TTP30P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -100V Low RDS(ON) ID (at VGS =-10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V) ... See More ⇒

Detailed specifications: TTB118N08A, TTP118N08A, TTB135N68A, TTP135N68A, TTB145N06A, TTP145N06A, TTB145N08A, TTP145N08A, IRF4905, TTD30P10AT, TTP30P10AT, TTB85N08A, TTP85N08A, TTB85N08AA, TTP85N08AA, TTB95N68A, TTD95N68A

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