All MOSFET. TTB30P10AT Datasheet

 

TTB30P10AT Datasheet and Replacement


   Type Designator: TTB30P10AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 625 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO263
 

 TTB30P10AT substitution

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TTB30P10AT Datasheet (PDF)

 ..1. Size:798K  cn wuxi unigroup
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TTB30P10AT

TTB30P10AT,TTD30P10AT,TTP30P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -100V Low RDS(ON) ID (at VGS =-10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V)

Datasheet: TTB118N08A , TTP118N08A , TTB135N68A , TTP135N68A , TTB145N06A , TTP145N06A , TTB145N08A , TTP145N08A , 2N7000 , TTD30P10AT , TTP30P10AT , TTB85N08A , TTP85N08A , TTB85N08AA , TTP85N08AA , TTB95N68A , TTD95N68A .

History: IXTP10P50P

Keywords - TTB30P10AT MOSFET datasheet

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