All MOSFET. TTB85N08A Datasheet

 

TTB85N08A Datasheet and Replacement


   Type Designator: TTB85N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO263
 

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TTB85N08A Datasheet (PDF)

 ..1. Size:672K  cn wuxi unigroup
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TTB85N08A

TTB85N08A,TTP85N08A Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) Product Summary General Description Trench Power Technology VDS 85V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge Optimized for fast-switching Applications RDS(ON) (at VGS=10V)

 0.1. Size:834K  cn wuxi unigroup
 ttb85n08aa ttp85n08aa.pdf pdf_icon

TTB85N08A

TTB85N08AA,TTP85N08AA Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 85V Low RDS(ON) ID (at VGS =10V) 85A Low Gate Charge RDS(ON) (at VGS =10V)

Datasheet: TTP135N68A , TTB145N06A , TTP145N06A , TTB145N08A , TTP145N08A , TTB30P10AT , TTD30P10AT , TTP30P10AT , SPP20N60C3 , TTP85N08A , TTB85N08AA , TTP85N08AA , TTB95N68A , TTD95N68A , TTP95N68A , TTD100N04AT , TTP100N04AT .

History: BUK7Y18-75B | STW40N20

Keywords - TTB85N08A MOSFET datasheet

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