TTP85N08A PDF and Equivalents Search

 

TTP85N08A Specs and Replacement

Type Designator: TTP85N08A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 245 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220

TTP85N08A substitution

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TTP85N08A datasheet

 ..1. Size:672K  cn wuxi unigroup
ttb85n08a ttp85n08a.pdf pdf_icon

TTP85N08A

TTB85N08A,TTP85N08A Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) Product Summary General Description Trench Power Technology VDS 85V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge Optimized for fast-switching Applications RDS(ON) (at VGS=10V) ... See More ⇒

 0.1. Size:834K  cn wuxi unigroup
ttb85n08aa ttp85n08aa.pdf pdf_icon

TTP85N08A

TTB85N08AA,TTP85N08AA Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 85V Low RDS(ON) ID (at VGS =10V) 85A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TTB145N06A , TTP145N06A , TTB145N08A , TTP145N08A , TTB30P10AT , TTD30P10AT , TTP30P10AT , TTB85N08A , IRFP260 , TTB85N08AA , TTP85N08AA , TTB95N68A , TTD95N68A , TTP95N68A , TTD100N04AT , TTP100N04AT , TTD120N03AT .

Keywords - TTP85N08A MOSFET specs

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