All MOSFET. TTD100N04AT Datasheet

 

TTD100N04AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: TTD100N04AT
   Marking Code: 100N04AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 120 W
   Maximum Drain-Source Voltage |Vds|: 40 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
   Maximum Drain Current |Id|: 100 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 80 nC
   Rise Time (tr): 18 nS
   Drain-Source Capacitance (Cd): 356 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm
   Package: TO252

 TTD100N04AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TTD100N04AT Datasheet (PDF)

 ..1. Size:448K  cn wuxi unigroup
 ttd100n04at ttp100n04at.pdf

TTD100N04AT TTD100N04AT

TTD100N04AT, TTP100N04AT Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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