TTD100N04AT Specs and Replacement
Type Designator: TTD100N04AT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 356 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO252
TTD100N04AT substitution
- MOSFET ⓘ Cross-Reference Search
TTD100N04AT datasheet
ttd100n04at ttp100n04at.pdf
TTD100N04AT, TTP100N04AT Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and ... See More ⇒
Detailed specifications: TTP30P10AT, TTB85N08A, TTP85N08A, TTB85N08AA, TTP85N08AA, TTB95N68A, TTD95N68A, TTP95N68A, AON7410, TTP100N04AT, TTD120N03AT, TTP120N03AT, TTD120N04AT, TTP120N04AT, TTD135N68A, TTD160N03GT, TTP160N03GT
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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