All MOSFET. TTD100N04AT Datasheet

 

TTD100N04AT Datasheet and Replacement


   Type Designator: TTD100N04AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 356 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO252
 

 TTD100N04AT substitution

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TTD100N04AT Datasheet (PDF)

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TTD100N04AT

TTD100N04AT, TTP100N04AT Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and

Datasheet: TTP30P10AT , TTB85N08A , TTP85N08A , TTB85N08AA , TTP85N08AA , TTB95N68A , TTD95N68A , TTP95N68A , 5N60 , TTP100N04AT , TTD120N03AT , TTP120N03AT , TTD120N04AT , TTP120N04AT , TTD135N68A , TTD160N03GT , TTP160N03GT .

History: TTB85N08AA

Keywords - TTD100N04AT MOSFET datasheet

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