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TTD135N68A PDF Specs and Replacement


   Type Designator: TTD135N68A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 443 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO252
 

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TTD135N68A PDF Specs

 ..1. Size:670K  cn wuxi unigroup
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TTD135N68A

TTD135N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 68V Low RDS(ON) ID (at VGS =10V) 135A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TTD95N68A , TTP95N68A , TTD100N04AT , TTP100N04AT , TTD120N03AT , TTP120N03AT , TTD120N04AT , TTP120N04AT , IRF530 , TTD160N03GT , TTP160N03GT , TTD18P10AT , TTP18P10AT , TTD20N04AT , TTD30P03AT , TTD35N02AV , TTD40P03AT .

History: STB75NF75LT4 | 1N60G-TMS4-T | 2N3369 | 10N60G-TF3T-T | 20N65D

Keywords - TTD135N68A MOSFET specs

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