TTD135N68A Datasheet. Specs and Replacement

Type Designator: TTD135N68A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 443 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO252

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TTD135N68A datasheet

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TTD135N68A

TTD135N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 68V Low RDS(ON) ID (at VGS =10V) 135A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TTD95N68A, TTP95N68A, TTD100N04AT, TTP100N04AT, TTD120N03AT, TTP120N03AT, TTD120N04AT, TTP120N04AT, 12N60, TTD160N03GT, TTP160N03GT, TTD18P10AT, TTP18P10AT, TTD20N04AT, TTD30P03AT, TTD35N02AV, TTD40P03AT

Keywords - TTD135N68A MOSFET specs

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