All MOSFET. TTD135N68A Datasheet

 

TTD135N68A Datasheet and Replacement


   Type Designator: TTD135N68A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 443 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO252
 

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TTD135N68A Datasheet (PDF)

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TTD135N68A

TTD135N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 68V Low RDS(ON) ID (at VGS =10V) 135A Low Gate Charge RDS(ON) (at VGS =10V)

Datasheet: TTD95N68A , TTP95N68A , TTD100N04AT , TTP100N04AT , TTD120N03AT , TTP120N03AT , TTD120N04AT , TTP120N04AT , AO4407 , TTD160N03GT , TTP160N03GT , TTD18P10AT , TTP18P10AT , TTD20N04AT , TTD30P03AT , TTD35N02AV , TTD40P03AT .

History: BUK964R4-40B | STD7NM80 | BF245C | 2SJ389S | 70N06 | NVMFD024N06CT1G | NCE60NF200K

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