TTD135N68A MOSFET. Datasheet pdf. Equivalent
Type Designator: TTD135N68A
Marking Code: 135N68A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 46 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 114 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 443 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO252
TTD135N68A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTD135N68A Datasheet (PDF)
ttd135n68a.pdf
TTD135N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 68V Low RDS(ON) ID (at VGS =10V) 135A Low Gate Charge RDS(ON) (at VGS =10V)
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