All MOSFET. TTD160N03GT Datasheet

 

TTD160N03GT Datasheet and Replacement


   Type Designator: TTD160N03GT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 904 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: TO252
 

 TTD160N03GT substitution

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TTD160N03GT Datasheet (PDF)

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TTD160N03GT

TTD160N03GT, TTP160N03GT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package

Datasheet: TTP95N68A , TTD100N04AT , TTP100N04AT , TTD120N03AT , TTP120N03AT , TTD120N04AT , TTP120N04AT , TTD135N68A , IRLB4132 , TTP160N03GT , TTD18P10AT , TTP18P10AT , TTD20N04AT , TTD30P03AT , TTD35N02AV , TTD40P03AT , TTD50P04AT .

History: PSMN2R9-25YLC | TK34E10N1 | BSZ0902NS | IRFH5255PBF | AOTF12T50P

Keywords - TTD160N03GT MOSFET datasheet

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