TTD160N03GT PDF Specs and Replacement
Type Designator: TTD160N03GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 904 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: TO252
TTD160N03GT substitution
TTD160N03GT PDF Specs
ttd160n03gt ttp160n03gt.pdf
TTD160N03GT, TTP160N03GT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package ... See More ⇒
Detailed specifications: TTP95N68A , TTD100N04AT , TTP100N04AT , TTD120N03AT , TTP120N03AT , TTD120N04AT , TTP120N04AT , TTD135N68A , CS150N03A8 , TTP160N03GT , TTD18P10AT , TTP18P10AT , TTD20N04AT , TTD30P03AT , TTD35N02AV , TTD40P03AT , TTD50P04AT .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
