TTD160N03GT Datasheet. Specs and Replacement

Type Designator: TTD160N03GT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 143 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 904 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: TO252

  📄📄 Copy 

TTD160N03GT substitution

- MOSFET ⓘ Cross-Reference Search

 

TTD160N03GT datasheet

 ..1. Size:448K  cn wuxi unigroup
 ttd160n03gt ttp160n03gt.pdf pdf_icon

TTD160N03GT

TTD160N03GT, TTP160N03GT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package ... See More ⇒

Detailed specifications: TTP95N68A, TTD100N04AT, TTP100N04AT, TTD120N03AT, TTP120N03AT, TTD120N04AT, TTP120N04AT, TTD135N68A, 4435, TTP160N03GT, TTD18P10AT, TTP18P10AT, TTD20N04AT, TTD30P03AT, TTD35N02AV, TTD40P03AT, TTD50P04AT

Keywords - TTD160N03GT MOSFET specs

 TTD160N03GT cross reference

 TTD160N03GT equivalent finder

 TTD160N03GT pdf lookup

 TTD160N03GT substitution

 TTD160N03GT replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.