TTD30P03AT Specs and Replacement

Type Designator: TTD30P03AT

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 236 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO252

TTD30P03AT substitution

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TTD30P03AT datasheet

 ..1. Size:681K  cn wuxi unigroup
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TTD30P03AT

TTD30P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V) ... See More ⇒

 8.1. Size:453K  cn wuxi unigroup
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TTD30P03AT

TTD30P10AT, TTP30P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP30P10AT TO-220 30P10AT TTD30P10AT TO... See More ⇒

 8.2. Size:798K  cn wuxi unigroup
 ttb30p10at ttd30p10at ttp30p10at.pdf pdf_icon

TTD30P03AT

TTB30P10AT,TTD30P10AT,TTP30P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -100V Low RDS(ON) ID (at VGS =-10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V) ... See More ⇒

Detailed specifications: TTD120N04AT, TTP120N04AT, TTD135N68A, TTD160N03GT, TTP160N03GT, TTD18P10AT, TTP18P10AT, TTD20N04AT, TK10A60D, TTD35N02AV, TTD40P03AT, TTD50P04AT, TTD60N03QT, TTD65N04AT, TTD70N04AT, TTP70N04AT, TTD85N03AT

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.