All MOSFET. TTD30P03AT Datasheet

 

TTD30P03AT Datasheet and Replacement


   Type Designator: TTD30P03AT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 236 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252
 

 TTD30P03AT substitution

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TTD30P03AT Datasheet (PDF)

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TTD30P03AT

TTD30P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V)

 8.1. Size:453K  cn wuxi unigroup
 ttd30p10at ttp30p10at.pdf pdf_icon

TTD30P03AT

TTD30P10AT, TTP30P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP30P10AT TO-220 30P10AT TTD30P10AT TO

 8.2. Size:798K  cn wuxi unigroup
 ttb30p10at ttd30p10at ttp30p10at.pdf pdf_icon

TTD30P03AT

TTB30P10AT,TTD30P10AT,TTP30P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -100V Low RDS(ON) ID (at VGS =-10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V)

Datasheet: TTD120N04AT , TTP120N04AT , TTD135N68A , TTD160N03GT , TTP160N03GT , TTD18P10AT , TTP18P10AT , TTD20N04AT , 13N50 , TTD35N02AV , TTD40P03AT , TTD50P04AT , TTD60N03QT , TTD65N04AT , TTD70N04AT , TTP70N04AT , TTD85N03AT .

History: PD618BA | TTD50P04AT | TTD20N04AT | PD676BA | PD616BA | TTD40P03AT

Keywords - TTD30P03AT MOSFET datasheet

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