TTD40P03AT MOSFET. Datasheet pdf. Equivalent
Type Designator: TTD40P03AT
Marking Code: 40P03AT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 288 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO252
TTD40P03AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTD40P03AT Datasheet (PDF)
..1. Size:624K cn wuxi unigroup
ttd40p03at.pdf
ttd40p03at.pdf
TTD40P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =10V) -40A Low Gate Charge RDS(ON) (at VGS =-10V)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
