TTD65N04AT Specs and Replacement

Type Designator: TTD65N04AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

TTD65N04AT substitution

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TTD65N04AT datasheet

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TTD65N04AT

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Detailed specifications: TTD18P10AT, TTP18P10AT, TTD20N04AT, TTD30P03AT, TTD35N02AV, TTD40P03AT, TTD50P04AT, TTD60N03QT, IRF1407, TTD70N04AT, TTP70N04AT, TTD85N03AT, TTD90N03AT, TTP90N03AT, TTD90P03AT, TTG160N03AT, TTG160N03GT

Keywords - TTD65N04AT MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs