All MOSFET. TTD65N04AT Datasheet

 

TTD65N04AT Datasheet and Replacement


   Type Designator: TTD65N04AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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TTD65N04AT Datasheet (PDF)

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TTD65N04AT

TTD65N04AT Wuxi Unigroup Microelectronics CO.,LTD. 40V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 40V Low RDS(ON) ID (at VGS =10V) 65A Low Gate Charge RDS(ON) (at VGS =10V)

Datasheet: TTD18P10AT , TTP18P10AT , TTD20N04AT , TTD30P03AT , TTD35N02AV , TTD40P03AT , TTD50P04AT , TTD60N03QT , RFP50N06 , TTD70N04AT , TTP70N04AT , TTD85N03AT , TTD90N03AT , TTP90N03AT , TTD90P03AT , TTG160N03AT , TTG160N03GT .

History: CEM3053 | AM4435 | IRFS9542 | BL40N30L-W | 2SK2321

Keywords - TTD65N04AT MOSFET datasheet

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