TTX2301A Datasheet. Specs and Replacement
Type Designator: TTX2301A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 56 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
Package: SOT23
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TTX2301A substitution
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TTX2301A datasheet
ttx2301a.pdf
TTX2301A Wuxi Unigroup Microelectronics CO.,LTD. 20V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -20V Low RDS(ON) ID (at VGS =-4.5V) -2.6A Low Gate Charge RDS(ON) (at VGS =-10V) ... See More ⇒
ttx2305a.pdf
TTX2305A Wuxi Unigroup Microelectronics CO.,LTD. 20V P-Channel Trench MOSFET(Preliminary) Product Summary General Description VDS -20V Trench Power technology ID (at VGS =-10V) -4.5A Low RDS(ON) RDS(ON) (at VGS =-10V) ... See More ⇒
ttx2302a.pdf
TTX2302A Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 20V Low RDS(ON) ID (at VGS =10V) 3.7A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒
ttx2302.pdf
TTX2302 Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 20V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking a... See More ⇒
Detailed specifications: TTG160N03GT, TTG65N10A, TTG90P03ATC, TTJ12P03AT, TTK8205, TTK8205A, TTP115N68A, TTP88N08A, IRF730, TTX2302, TTX2302A, TTX2305A, TTX2312A, TTX2N7002KA, TTX3401A, VBB1630, VBC6N2014
Keywords - TTX2301A MOSFET specs
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History: 2SK2462 | 2SK2494-01 | 2N7242 | MTP4N08 | TTD135N68A | 2SK4066 | 2SJ546
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