VBE1104N Datasheet. Specs and Replacement

Type Designator: VBE1104N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: TO252

  📄📄 Copy 

VBE1104N substitution

- MOSFET ⓘ Cross-Reference Search

 

VBE1104N datasheet

 ..1. Size:1248K  cn vbsemi
 vbe1104n.pdf pdf_icon

VBE1104N

VBE1104N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unle... See More ⇒

 8.1. Size:827K  cn vbsemi
 vbe1101m.pdf pdf_icon

VBE1104N

VBE1101M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING... See More ⇒

 8.2. Size:979K  cn vbsemi
 vbe1101n.pdf pdf_icon

VBE1104N

VBE1101N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 100 % Rg Tested 0.0075 at VGS = 10 V 85 100 100 % UIS Tested 0.0095 at VGS = 4.5 V 75 APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 ... See More ⇒

 8.3. Size:526K  cn vbsemi
 vbe1102n.pdf pdf_icon

VBE1104N

VBE1102N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless o... See More ⇒

SHOW MORE

Detailed specifications: VBC6N2022, VBC6N3010, VBC6P3033, VBC7P2216, VBC8338, VBE1101M, VBE1101N, VBE1102N, 75N75, VBE1105, VBE1106N, VBE1158N, VBE1201K, VBE1202, VBE1203M, VBE1206, VBE1206N

Keywords - VBE1104N MOSFET specs

 VBE1104N cross reference

 VBE1104N equivalent finder

 VBE1104N pdf lookup

 VBE1104N substitution

 VBE1104N replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility