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VBE1105 Specs and Replacement


   Type Designator: VBE1105
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 155 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005(typ) Ohm
   Package: TO252
 

 VBE1105 substitution

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VBE1105 Specs

 ..1. Size:651K  cn vbsemi
 vbe1105.pdf pdf_icon

VBE1105

VBE1105 www.VBsemi.com N-Channel 100V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 100 0.005 at VGS = 10 V 100a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING... See More ⇒

 8.1. Size:827K  cn vbsemi
 vbe1101m.pdf pdf_icon

VBE1105

VBE1101M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING... See More ⇒

 8.2. Size:979K  cn vbsemi
 vbe1101n.pdf pdf_icon

VBE1105

VBE1101N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 100 % Rg Tested 0.0075 at VGS = 10 V 85 100 100 % UIS Tested 0.0095 at VGS = 4.5 V 75 APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 ... See More ⇒

 8.3. Size:1248K  cn vbsemi
 vbe1104n.pdf pdf_icon

VBE1105

VBE1104N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unle... See More ⇒

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Detailed specifications: VBC6N3010 , VBC6P3033 , VBC7P2216 , VBC8338 , VBE1101M , VBE1101N , VBE1102N , VBE1104N , AO4407A , VBE1106N , VBE1158N , VBE1201K , VBE1202 , VBE1203M , VBE1206 , VBE1206N , VBE1302 .

History: VBE1158N | VBE1104N

Keywords - VBE1105 MOSFET specs

 VBE1105 cross reference
 VBE1105 equivalent finder
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