VBE2658 Datasheet. Specs and Replacement
Type Designator: VBE2658 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO252
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VBE2658 substitution
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VBE2658 datasheet
vbe2658.pdf
VBE2658 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Brid... See More ⇒
vbe2625.pdf
VBE2625 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter S... See More ⇒
vbe2610n.pdf
VBE2610N www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sym... See More ⇒
Detailed specifications: VBE2309, VBE2311, VBE2317, VBE2338, VBE2412, VBE2509, VBE2610N, VBE2625, IRF4905, VBE3310, VBE5415, VBE5638, VBF2355, VBFB1101M, VBFB1102M, VBFB1104N, VBFB1203M
Keywords - VBE2658 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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