VBFB1102M Datasheet. Specs and Replacement
Type Designator: VBFB1102M 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.20 typ Ohm
Package: TO251
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VBFB1102M datasheet
..1. Size:567K cn vbsemi
vbfb1102m.pdf 
VBFB1102M www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 10 V 0.20 Available in Tape and Reel Available Qg (Max.) (nC) 16 Dynamic dV/dt Rating Qgs (nC) 4.4 Repetitive Avalanche Rated Available Qgd (nC) 7.7 175 C Operating Temperature Configuration Sin... See More ⇒
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vbfb1101m.pdf
VBFB1101M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwi... See More ⇒
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vbfb1104n.pdf
VBFB1104N www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.036 at VGS = 10 V 35 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXI... See More ⇒
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vbfb1303.pdf
VBFB1303 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 100 30 95nC 0.0045 at VGS = 4.5 V 97 APPLICATIONS D TO-251 OR-ing Server DC/DC G S G D S Top View N-Channel MOSFET AB... See More ⇒
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VBM165R07 / VBMB165R07 VBE165R07 / VBFB165R07 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 1.1 Reduced switching and conduction losses Qg max. (nC) 25 Ultra low gate charge (Qg) Qgs (nC) 2.0 Avalanche energy r... See More ⇒
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VBFB1410 www.VBsemi.com N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.0 3 at VGS = 10 V 55d TrenchFET Power MOSFET 40 9.5 0.0 at VGS = 4.5 V 5d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Supply - Secondary ... See More ⇒
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VBFB1405 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 120 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification TO-251 Power Supplies D G S G D S N-Channel MOSFET Top View ABSOLUTE M... See More ⇒
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vbfb1203m.pdf
VBFB1203M www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.270 at VGS = 10 V 8 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMU... See More ⇒
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VBFB1208N www.VBsemi.com N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.056 at VGS = 10 V 25 PWM Optimized 200 0.070 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D Drain Connected to G Dr... See More ⇒
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vbfb165r04.pdf
VBFB165R04 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement RoHS RDS(on) ( )VGS = 10 V 2.0 COMPLIANT Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Comp... See More ⇒
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vbfb1615.pdf
VBFB1615 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 55 Material categorization 60 0.012 at VGS = 4.5 V 47 TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbo... See More ⇒
9.15. Size:1415K cn vbsemi
vbfb165r02.pdf
VBFB165R02 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 5 RoHS Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 11 Ruggedness Qgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 5.... See More ⇒
Detailed specifications: VBE2610N, VBE2625, VBE2658, VBE3310, VBE5415, VBE5638, VBF2355, VBFB1101M, IRFP064N, VBFB1104N, VBFB1203M, VBFB1208N, VBFB1303, VBFB1311, VBFB1405, VBFB1410, VBFB1615
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