VBFB1208N Datasheet. Specs and Replacement
Type Designator: VBFB1208N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 typ Ohm
Package: TO251
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VBFB1208N datasheet
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vbfb1208n.pdf 
VBFB1208N www.VBsemi.com N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.056 at VGS = 10 V 25 PWM Optimized 200 0.070 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D Drain Connected to G Dr... See More ⇒
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VBFB1303 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 100 30 95nC 0.0045 at VGS = 4.5 V 97 APPLICATIONS D TO-251 OR-ing Server DC/DC G S G D S Top View N-Channel MOSFET AB... See More ⇒
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VBFB1410 www.VBsemi.com N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.0 3 at VGS = 10 V 55d TrenchFET Power MOSFET 40 9.5 0.0 at VGS = 4.5 V 5d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Supply - Secondary ... See More ⇒
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Detailed specifications: VBE3310, VBE5415, VBE5638, VBF2355, VBFB1101M, VBFB1102M, VBFB1104N, VBFB1203M, 2SK3568, VBFB1303, VBFB1311, VBFB1405, VBFB1410, VBFB1615, VBFB1630, VBFB165R02, VBFB165R04
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