VBFB165R04 Datasheet. Specs and Replacement
Type Designator: VBFB165R04 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 177 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO251
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VBFB165R04 substitution
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VBFB165R04 datasheet
vbfb165r04.pdf
VBFB165R04 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement RoHS RDS(on) ( )VGS = 10 V 2.0 COMPLIANT Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Comp... See More ⇒
vbm165r07 vbmb165r07 vbe165r07 vbfb165r07.pdf
VBM165R07 / VBMB165R07 VBE165R07 / VBFB165R07 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 1.1 Reduced switching and conduction losses Qg max. (nC) 25 Ultra low gate charge (Qg) Qgs (nC) 2.0 Avalanche energy r... See More ⇒
vbfb165r02.pdf
VBFB165R02 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 5 RoHS Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 11 Ruggedness Qgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 5.... See More ⇒
Detailed specifications: VBFB1208N, VBFB1303, VBFB1311, VBFB1405, VBFB1410, VBFB1615, VBFB1630, VBFB165R02, 5N65, VBFB2317, VBFB2412, VBFB2610N, VBFB2658, VBI1101M, VBI1322, VBI1638, VBI1695
Keywords - VBFB165R04 MOSFET specs
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