VBFB2317 Datasheet. Specs and Replacement

Type Designator: VBFB2317  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm

Package: TO251

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VBFB2317 datasheet

 ..1. Size:626K  cn vbsemi
 vbfb2317.pdf pdf_icon

VBFB2317

VBFB2317 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.022 at VGS = - 4.5 V - 35 APPLICATIONS TO-251 Load Switch S Battery Switch G D P-Channel MOSFET G D S Top... See More ⇒

 9.1. Size:512K  cn vbsemi
 vbfb2658.pdf pdf_icon

VBFB2317

VBFB2658 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bri... See More ⇒

 9.2. Size:623K  cn vbsemi
 vbfb2412.pdf pdf_icon

VBFB2317

VBFB2412 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.010 at VGS = - 10 V 55 RoHS* - 40 COMPLIANT 0.014 at VGS = - 4.5 V 54 TO-251 S G G D S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit ... See More ⇒

 9.3. Size:637K  cn vbsemi
 vbfb2102m.pdf pdf_icon

VBFB2317

VBFB2102M www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.215 at VGS = - 10 V - 12 TrenchFET Power MOSFET - 100 11 0.234 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/... See More ⇒

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Detailed specifications: VBFB1303, VBFB1311, VBFB1405, VBFB1410, VBFB1615, VBFB1630, VBFB165R02, VBFB165R04, 20N50, VBFB2412, VBFB2610N, VBFB2658, VBI1101M, VBI1322, VBI1638, VBI1695, VBI2338

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