VBK4223N Datasheet and Replacement
Type Designator: VBK4223N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.155(typ) Ohm
Package: SC70-6
VBK4223N substitution
VBK4223N Datasheet (PDF)
vbk4223n.pdf

VBK4223Nwww.VBsemi.comDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET- 20 2.7 nC0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSC-70=-6S1 S2S1 1 6 D1G1 G2G1 2 5 G2
Datasheet: VBJ2102M , VBJ2456 , VBJ2658 , VBK1270 , VBK162K , VBK2298 , VBK3215N , VBK362K , IRF530 , VBK5213N , VBK8238 , VBL1101M , VBL1101N , VBL1104N , VBL1105 , VBL1154N , VBL1203M .
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