VBK4223N Specs and Replacement

Type Designator: VBK4223N

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 typ Ohm

Package: SC70-6

VBK4223N substitution

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VBK4223N datasheet

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VBK4223N

VBK4223N www.VBsemi.com Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1 2 5 G2... See More ⇒

Detailed specifications: VBJ2102M, VBJ2456, VBJ2658, VBK1270, VBK162K, VBK2298, VBK3215N, VBK362K, 20N50, VBK5213N, VBK8238, VBL1101M, VBL1101N, VBL1104N, VBL1105, VBL1154N, VBL1203M

Keywords - VBK4223N MOSFET specs

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