All MOSFET. VBK5213N Datasheet

 

VBK5213N Datasheet and Replacement


   Type Designator: VBK5213N
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.090(typ) Ohm
   Package: SOT363
 

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VBK5213N Datasheet (PDF)

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VBK5213N

VBK5213Nwww.VBsemi.comN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = - 4.5

Datasheet: VBJ2456 , VBJ2658 , VBK1270 , VBK162K , VBK2298 , VBK3215N , VBK362K , VBK4223N , IRF520 , VBK8238 , VBL1101M , VBL1101N , VBL1104N , VBL1105 , VBL1154N , VBL1203M , VBL1310 .

History: IPW50R299CP

Keywords - VBK5213N MOSFET datasheet

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