VBK5213N Specs and Replacement

Type Designator: VBK5213N

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.090 typ Ohm

Package: SOT363

VBK5213N substitution

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VBK5213N datasheet

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VBK5213N

VBK5213N www.VBsemi.com N- and P- Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs 1.8 V Rated N-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package 0.130 at VGS = 1.8 V 1.50 Fast Switching 0.155 at VGS = - 4.5... See More ⇒

Detailed specifications: VBJ2456, VBJ2658, VBK1270, VBK162K, VBK2298, VBK3215N, VBK362K, VBK4223N, IRF520, VBK8238, VBL1101M, VBL1101N, VBL1104N, VBL1105, VBL1154N, VBL1203M, VBL1310

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