VBL1310 Specs and Replacement
Type Designator: VBL1310
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 255 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 typ Ohm
Package: TO263
VBL1310 substitution
- MOSFET ⓘ Cross-Reference Search
VBL1310 datasheet
vbl1310.pdf
VBL1310 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.012 at VGS = 10 V 50 30 25 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing Server DC/DC D2PAK (TO-263) G G D S S N-Channel MOSFET ABSO... See More ⇒
vbm1307 vbl1307.pdf
VBM1307/VBL1307 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 30 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.0075 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0095 ID (A) 70 Configuration Single Package TO-220AB/ TO-263 TO-220AB D TO-263 G S G D S N-Channel MOSFET G D S Top ... See More ⇒
vbnc1303 vbl1303.pdf
VBNC1303 / VBL1303 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0038 at VGS = 10 V 98 30 82 nC 0.0044 at VGS = 4.5 V 98 APPLICATIONS OR-ing Server DC/DC D I2PAK D2PAK (TO-262) (TO-263) G G D ... See More ⇒
Detailed specifications: VBK5213N, VBK8238, VBL1101M, VBL1101N, VBL1104N, VBL1105, VBL1154N, VBL1203M, AO3400A, VBL1405, VBL1603, VBL1615, VBL1632, VBL165R04, VBL165R18, VBL1806, VBL2309
Keywords - VBL1310 MOSFET specs
VBL1310 cross reference
VBL1310 equivalent finder
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VBL1310 substitution
VBL1310 replacement
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