All MOSFET. VBL2309 Datasheet

 

VBL2309 Datasheet and Replacement


   Type Designator: VBL2309
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1455 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008(typ) Ohm
   Package: TO263
 

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VBL2309 Datasheet (PDF)

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VBL2309

VBL2309www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = - 10 V - 75 100 % Rg TestedRoHS- 30 56 nCCOMPLIANT 100 % UIS Tested0.011 at VGS = - 4.5 V - 65APPLICATIONS Load Switch Notebook Adaptor SwitchS D2PAK (TO-263)G DGSD P

Datasheet: VBL1310 , VBL1405 , VBL1603 , VBL1615 , VBL1632 , VBL165R04 , VBL165R18 , VBL1806 , 60N06 , VBL2610N , VBL2625 , VBL2658 , VBM1101M , VBM1101N , VBM1102N , VBM1104N , VBM1105 .

History: HAT2126RP | 2SK3269 | SHD226403R | AO4614 | AP03N40I-HF | IXFH96N15P | FMI80N10T2

Keywords - VBL2309 MOSFET datasheet

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