All MOSFET. VBL2309 Datasheet

 

VBL2309 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBL2309
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 115 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1455 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008(typ) Ohm
   Package: TO263

 VBL2309 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBL2309 Datasheet (PDF)

 ..1. Size:744K  cn vbsemi
 vbl2309.pdf

VBL2309 VBL2309

VBL2309www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = - 10 V - 75 100 % Rg TestedRoHS- 30 56 nCCOMPLIANT 100 % UIS Tested0.011 at VGS = - 4.5 V - 65APPLICATIONS Load Switch Notebook Adaptor SwitchS D2PAK (TO-263)G DGSD P

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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