VBL2309 Specs and Replacement
Type Designator: VBL2309
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1455 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 typ Ohm
Package: TO263
VBL2309 substitution
- MOSFET ⓘ Cross-Reference Search
VBL2309 datasheet
vbl2309.pdf
VBL2309 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = - 10 V - 75 100 % Rg Tested RoHS - 30 56 nC COMPLIANT 100 % UIS Tested 0.011 at VGS = - 4.5 V - 65 APPLICATIONS Load Switch Notebook Adaptor Switch S D2PAK (TO-263) G D G S D P... See More ⇒
Detailed specifications: VBL1310, VBL1405, VBL1603, VBL1615, VBL1632, VBL165R04, VBL165R18, VBL1806, IRLB3034, VBL2610N, VBL2625, VBL2658, VBM1101M, VBM1101N, VBM1102N, VBM1104N, VBM1105
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