VBL2658 Datasheet and Replacement
Type Designator: VBL2658
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 61 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048(typ) Ohm
Package: TO263
- MOSFET Cross-Reference Search
VBL2658 Datasheet (PDF)
vbl2658.pdf

VBL2658www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Load
vbl2625.pdf

VBL2625www.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.0195 at VGS = - 10 V - 53APPLICATIONS- 60 76 nC0.0250 at VGS = - 4.5 V - 42 Load SwitchSD2PAK (TO-263)GDGDSP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par
vbl2610n.pdf

VBL2610Nwww.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.064 at VGS = - 10 V - 30APPLICATIONS- 60120.077 at VGS = - 4.5 V - 28 Load SwitchSD2PAK(TO-263)GGDSDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDMS9620S | IRFI7536G | WMM11N80M3
Keywords - VBL2658 MOSFET datasheet
VBL2658 cross reference
VBL2658 equivalent finder
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History: FDMS9620S | IRFI7536G | WMM11N80M3



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