All MOSFET. STU30L01A Datasheet

 

STU30L01A MOSFET. Datasheet pdf. Equivalent

Type Designator: STU30L01A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 30 A

Drain-Source Capacitance (Cd): 166 pF

Maximum Drain-Source On-State Resistance (Rds): 0.037 Ohm

Package: TO252_DPAK

STU30L01A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STU30L01A Datasheet (PDF)

1.1. stu30l01a_std30l01a.pdf Size:118K _samhop

STU30L01A
STU30L01A

Green Product STU/D30L01A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Typ VDSS ID Rugged and reliable. 100V 30A 30 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA

2.1. stu30l01_std30l01.pdf Size:118K _samhop

STU30L01A
STU30L01A

Green Product STU/D30L01 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Typ VDSS ID Rugged and reliable. 100V 30A 30 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=

5.1. stu303s_std303s.pdf Size:184K _samhop

STU30L01A
STU30L01A

S TU/D303S S amHop Microelectronics C orp. Nov, 2007 16, P-C hannel E nhancement Mode Field E ffect Transistor FEATURES PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). RDS(ON) (mW) Max V DS S ID R ugged and reliable. 28 @ V GS =-10V S urface Mount Package. -30V -24A 40 @ V GS = -4.5V ESD Procteced D D G S G STU SERIES STD SERIES TO-252AA(D-P AK) TO-251(l-P

5.2. stu30n15_std30n15.pdf Size:146K _samhop

STU30L01A
STU30L01A

Green Product STU/D30N15 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Typ VDSS ID Rugged and reliable. 22A 150V 62 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES TO-252AA (D-PAK) TO-251 (I-PAK) ABSOLUTE MAXIMUM RATING

5.3. stu30n01_std30n01.pdf Size:141K _samhop

STU30L01A
STU30L01A

STU30N01 Green Product STD30N01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Typ VDSS ID Rugged and reliable. 30A 30 @ VGS=10V 100V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK A

5.4. stu307s_std307s.pdf Size:115K _samhop

STU30L01A
STU30L01A

Green Product STU/D307S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9.5 @ VGS=-10V Suface Mount Package. -30V -53A 14 @ VGS=-4.5V ESD Protected. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- P

5.5. stu309d.pdf Size:174K _samhop

STU30L01A
STU30L01A

S TU309D S amHop Microelectronics C orp. Nov 22 2006 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m Ω ) Max VDS S ID R DS (ON) ( m Ω ) Max 23 @ VG S = 10V 35 @ VG S = -10V -30V -14A 30V 18A 35 @ VG S = 4.5V 55 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1 S 2 S 1 N-ch S

5.6. stu302s_std302s.pdf Size:104K _samhop

STU30L01A
STU30L01A

S TU/D302S S amHop Microelectronics C orp. Apr 03,2006 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATURES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m Ω ) Max R ugged and reliable. 9 @ VGS =10V 30V 50 A TO-252 and TO-251 Package. 12 @ VGS =4.5V D D G S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK)

5.7. stu3030nls_std3030nls.pdf Size:125K _samhop

STU30L01A
STU30L01A

Green Product S TU/D3030NLS S amHop Microelectronics C orp. Aug 08,2005 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m Ω ) Max R ugged and reliable. 18 @ VGS = 10V 30V 30A TO-252 and TO-251 Package. 25 @ VGS =4.5V D D D G G S S G STU SERIES STD SERIES T

5.8. stu309dh.pdf Size:195K _samhop

STU30L01A
STU30L01A

Green Product S TU309DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m Ω ) Max VDS S ID R DS (ON) ( m Ω ) Max 22 @ VG S = 10V 34 @ VG S = -10V -30V -14A 30V 18A 34 @ VG S = 4.5V 54 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1

5.9. stu3055l_std3055l.pdf Size:120K _samhop

STU30L01A
STU30L01A

Green Product S TU/D3055L S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m Ω ) Max R ugged and reliable. 60 @ VGS = 10V 25V 12A TO-252 and TO-251 Package. 85 @ VGS =4.5V D D D G G S S G STU SERIES STD SERI

Datasheet: STU320S , FDB8860_F085 , STU310DH , FDB8870 , STU30N15 , FDB8870_F085 , STU30N01 , FDB8880 , 2SK105 , FDB8896 , STU30L01 , FDB8896_F085 , STU309DH , FDC2512 , FDC2612 , STU309D , FDC3512 .

 


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