2SK2476 PDF and Equivalents Search

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2476 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on) = 5.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 59... See More ⇒

N-channel MOS-FET 2SK2471-01 FAP-II Series 300V 0,53 10A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2479 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high voltage switching applications. 10.6 MAX. 4.8 MAX. FEATURES 3.6 0.2 1.3 0.2 10.0 Low On-Resistance RDS(on) = 7.5 (VGS = 10 V, ID = 2.0 A) Low Cis... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2477 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance RDS (on) = 1.0 (VGS = 10 V, ID = 5.0 A) 4 Low Ciss Ciss = 2 950 ... See More ⇒

MOSFET / P wer MOSFETs MOSFET P wer MOSFET F II F II F II F II Hi h p d witchin Av l nch r t d 2 VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) 1 Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms ( ) Watts V... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on) = 7.5 (VGS = 10 V, ID = 1.0 A) Low Ciss Ciss = 48... See More ⇒

N-channel MOS-FET 2SK2473-01 FAP-II Series 300V 0,2 20A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv... See More ⇒

Power F-MOS FETs 2SK2474 2SK2474 Silicon N-Channel MOS Unit mm For high-speed switching 6.5 0.1 5.3 0.1 4.35 0.1 Features 3.0 0.1 Low ON-resistance RDS(on) High-speed switching High drain-source voltage (VDSS) 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) Parameter Symbol Rating Unit 1 Gate 1 2 3 2 Drai... See More ⇒

... See More ⇒

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2475 Case FTO-220 (Unit mm) (F12F50VX2) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter ... See More ⇒

isc N-Channel MOSFET Transistor 2SK2475 DESCRIPTION Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS... See More ⇒