VBM15R08 Specs and Replacement

Type Designator: VBM15R08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.10 typ Ohm

Package: TO220AB

VBM15R08 substitution

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VBM15R08 datasheet

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 vbm15r08.pdf pdf_icon

VBM15R08

VBM15R08 www.VBsemi.com N hannel 500 D S Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 500 requirement RDS(on) ( )VGS = 10 V 1.1 Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49 ruggedness Qgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20 and current Configuration Single D T... See More ⇒

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 vbm15r13.pdf pdf_icon

VBM15R08

VBM15R13 www.VBsemi.com N hannel 500 D S Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements RDS(on) ( )VGS = 10 V 0.660 Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuration Single Complian... See More ⇒

Detailed specifications: VBM1208N, VBM1302, VBM1303, VBM1307, VBL1307, VBM1310, VBM1402, VBM1405, IRF640, VBM15R13, VBM1603, VBM1606, VBM1615, VBM1638, VBM165R02, VBM165R04, VBM165R07

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