All MOSFET. VBM15R08 Datasheet

 

VBM15R08 Datasheet and Replacement


   Type Designator: VBM15R08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.10(typ) Ohm
   Package: TO220AB
 

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VBM15R08 Datasheet (PDF)

 ..1. Size:796K  cn vbsemi
 vbm15r08.pdf pdf_icon

VBM15R08

VBM15R08www.VBsemi.comN hannel 500 D S Power MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 500requirementRDS(on) ()VGS = 10 V 1.1 Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20and currentConfiguration SingleDT

 8.1. Size:665K  cn vbsemi
 vbm15r13.pdf pdf_icon

VBM15R08

VBM15R13www.VBsemi.comN hannel 500 D S Power MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500ReqirementsRDS(on) ()VGS = 10 V 0.660 Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81Ruggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguration Single Complian

Datasheet: VBM1208N , VBM1302 , VBM1303 , VBM1307 , VBL1307 , VBM1310 , VBM1402 , VBM1405 , IRFP460 , VBM15R13 , VBM1603 , VBM1606 , VBM1615 , VBM1638 , VBM165R02 , VBM165R04 , VBM165R07 .

History: LP2301LT1G | IRFU214PBF | NCE60P12K | STF25NM50N | RSJ10HN06 | STN3PF06 | TPCS8101

Keywords - VBM15R08 MOSFET datasheet

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