All MOSFET. VBM15R08 Datasheet

 

VBM15R08 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBM15R08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 49(max) nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.10(typ) Ohm
   Package: TO220AB

 VBM15R08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBM15R08 Datasheet (PDF)

 ..1. Size:796K  cn vbsemi
 vbm15r08.pdf

VBM15R08 VBM15R08

VBM15R08www.VBsemi.comN hannel 500 D S Power MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 500requirementRDS(on) ()VGS = 10 V 1.1 Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20and currentConfiguration SingleDT

 8.1. Size:665K  cn vbsemi
 vbm15r13.pdf

VBM15R08 VBM15R08

VBM15R13www.VBsemi.comN hannel 500 D S Power MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500ReqirementsRDS(on) ()VGS = 10 V 0.660 Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81Ruggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguration Single Complian

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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