VBE165R07 Specs and Replacement
Type Designator: VBE165R07
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 typ Ohm
Package: TO252
VBE165R07 substitution
- MOSFET ⓘ Cross-Reference Search
VBE165R07 datasheet
vbm165r07 vbmb165r07 vbe165r07 vbfb165r07.pdf
VBM165R07 / VBMB165R07 VBE165R07 / VBFB165R07 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 1.1 Reduced switching and conduction losses Qg max. (nC) 25 Ultra low gate charge (Qg) Qgs (nC) 2.0 Avalanche energy r... See More ⇒
vbe165r04.pdf
VBE165R04 www.VBsemi.com Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoH... See More ⇒
vbe165r02.pdf
VBE165R02 www.VBsemi.com N-Channel 650 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 3.8 RoHS Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 15 Ruggedness Qgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 6 Compliant to Ro... See More ⇒
Detailed specifications: VBM1603, VBM1606, VBM1615, VBM1638, VBM165R02, VBM165R04, VBM165R07, VBMB165R07, AON6414A, VBFB165R07, VBM165R07S, VBMB165R07S, VBE165R07S, VBFB165R07S, VBM165R10, VBMB165R10, VBE165R10
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