VBP165R20S Specs and Replacement

Type Designator: VBP165R20S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 typ Ohm

Package: TO247AC

VBP165R20S substitution

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VBP165R20S datasheet

 ..1. Size:895K  cn vbsemi
 vbm165r20s vbmb165r20s vbp165r20s vbl165r20s.pdf pdf_icon

VBP165R20S

VBM165R20S / VBMB165R20S VBP165R20S / VBL165R20S www.VBsemi.com N-Channel 650-V (D-S) Super Junction MOSFET FEATURES PRODUCT SUMMARY Reduced trr, Qrr, and IRRM VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) max. ( ) at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss) Qg max. (nC) 106 Low switching losses due to reduced Qrr Qgs (nC) 14 Ul... See More ⇒

 9.1. Size:871K  cn vbsemi
 vbp1606.pdf pdf_icon

VBP165R20S

VBP1606 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.007 100 % Rg and UIS tested ID (A) 150 Configuration Single Package TO-247 D TO-247AC G S D G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER S... See More ⇒

Detailed specifications: VBFB165R10, VBL165R10, VBM165R12, VBMB165R12, VBL165R12, VBM165R18, VBM165R20S, VBMB165R20S, K3569, VBL165R20S, VBM1680, VBM16R02, VBMB16R02, VBE16R02, VBFB16R02, VBM16R04, VBMB16R04

Keywords - VBP165R20S MOSFET specs

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