VBM1806 Specs and Replacement
Type Designator: VBM1806
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 typ Ohm
Package: TO220AB
VBM1806 substitution
- MOSFET ⓘ Cross-Reference Search
VBM1806 datasheet
vbm1806.pdf
VBM1806 www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065 at VGS = 10 V 100 80 0.0090 at VGS = 6.0 V 90 17.1 nC 0.0140 at VGS = 4.5 V 70 TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symb... See More ⇒
vbm1808.pdf
VBM1808 www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Backligh... See More ⇒
vbm18r15s vbmb18r15s vbp18r15s.pdf
VBM18R15S / VBMB18R15S / VBP18R15S www.VBsemi.com N-Channel 800V (D-S) Super Junction Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 800 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) ... See More ⇒
Detailed specifications: VBE16R02, VBFB16R02, VBM16R04, VBMB16R04, VBE16R04, VBFB16R04, VBM16R08, VBM17R10, IRF530, VBM1808, VBM18R15S, VBMB18R15S, VBP18R15S, VBM2102M, VBM2309, VBM2610N, VBM2625
Keywords - VBM1806 MOSFET specs
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