VBP18R15S Specs and Replacement
Type Designator: VBP18R15S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 typ Ohm
Package: TO247AC
VBP18R15S substitution
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VBP18R15S datasheet
vbm18r15s vbmb18r15s vbp18r15s.pdf
VBM18R15S / VBMB18R15S / VBP18R15S www.VBsemi.com N-Channel 800V (D-S) Super Junction Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 800 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) ... See More ⇒
Detailed specifications: VBE16R04, VBFB16R04, VBM16R08, VBM17R10, VBM1806, VBM1808, VBM18R15S, VBMB18R15S, STP80NF70, VBM2102M, VBM2309, VBM2610N, VBM2625, VBM2658, VBMB1101M, VBMB1104N, VBMB1203M
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