All MOSFET. VBP18R15S Datasheet

 

VBP18R15S Datasheet and Replacement


   Type Designator: VBP18R15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38(typ) Ohm
   Package: TO247AC
 

 VBP18R15S substitution

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VBP18R15S Datasheet (PDF)

 ..1. Size:770K  cn vbsemi
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VBP18R15S

VBM18R15S / VBMB18R15S / VBP18R15Swww.VBsemi.comN-Channel 800V (D-S) Super Junction Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 800Available Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesAvailableQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC)

Datasheet: VBE16R04 , VBFB16R04 , VBM16R08 , VBM17R10 , VBM1806 , VBM1808 , VBM18R15S , VBMB18R15S , 20N50 , VBM2102M , VBM2309 , VBM2610N , VBM2625 , VBM2658 , VBMB1101M , VBMB1104N , VBMB1203M .

History: WFY6N02 | IRFU014A

Keywords - VBP18R15S MOSFET datasheet

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