All MOSFET. VBP18R15S Datasheet

 

VBP18R15S MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBP18R15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38(typ) Ohm
   Package: TO247AC

 VBP18R15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBP18R15S Datasheet (PDF)

 ..1. Size:770K  cn vbsemi
 vbm18r15s vbmb18r15s vbp18r15s.pdf

VBP18R15S VBP18R15S

VBM18R15S / VBMB18R15S / VBP18R15Swww.VBsemi.comN-Channel 800V (D-S) Super Junction Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 800Available Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesAvailableQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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