All MOSFET. VBP1104N Datasheet

 

VBP1104N Datasheet and Replacement


   Type Designator: VBP1104N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: TO247AC
 

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VBP1104N Datasheet (PDF)

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VBP1104N

VBP1104Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.035 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-247ACGSDGSN-Channel MOSFETABSOLUTE MAXIMUM RA

Datasheet: VBMB16R08 , VBMB17R07 , VBMB185R05 , VBMB2102M , VBMB2610N , VBMB2658 , VBNC1303 , VBL1303 , IRFZ48N , VBP15R50S , VBP1606 , VBQA1102N , VBQA1302 , VBQA1303 , VBQA1308 , VBQA1402 , VBQA1405 .

History: UT100N03G-TQ2-T | UT100N03L-TQ2-T

Keywords - VBP1104N MOSFET datasheet

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