VBP1104N Specs and Replacement
Type Designator: VBP1104N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm
Package: TO247AC
VBP1104N substitution
- MOSFET ⓘ Cross-Reference Search
VBP1104N datasheet
vbp1104n.pdf
VBP1104N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.035 at VGS = 10 V 100 50a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-247AC G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RA... See More ⇒
Detailed specifications: VBMB16R08, VBMB17R07, VBMB185R05, VBMB2102M, VBMB2610N, VBMB2658, VBNC1303, VBL1303, IRFZ48N, VBP15R50S, VBP1606, VBQA1102N, VBQA1302, VBQA1303, VBQA1308, VBQA1402, VBQA1405
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
