VBZA9358 Datasheet and Replacement

VBZA9358www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) (), ID (A)d, e Qg (Typ.)Typ. TrenchFET Power MOSFET0.013 at VGS = - 10 V - 8 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.017 at VGS = - 4.5 V - 6APPLICATIONS Load Switches- Notebook PCs- Desktop PCs- Game StationsS1 S2SO-8S1 1 D1

VBZA9435www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.026at VGS = - 10 V - 6 100 % Rg TestedRoHS- 30 29 nCCOMPLIANT 100 % UIS Tested0.030 at VGS = - 4.5 V - 5APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6

VBZA9945www.VBsemi.comDual N-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.027RDS(on) () at VGS = 4.5 V 0.041ID (A) per leg8Configuration DualSO-8 DualD2D1 D2D2 5D16D1 78G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel MO

VBZA9936www.VBsemi.comDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

VBZA9926www.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.015at VGS = 10 V 8 TrenchFET Power MOSFET200.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25Top

VBZA9926Awww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 10 V 5.8 TrenchFET Power MOSFET200.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25

VBZA9410www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO