VBZA9936 Specs and Replacement

Type Designator: VBZA9936

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 typ Ohm

Package: SO8

VBZA9936 substitution

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VBZA9936 datasheet

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VBZA9936

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VBZA9936

VBZA9945 www.VBsemi.com Dual N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.027 RDS(on) ( ) at VGS = 4.5 V 0.041 ID (A) per leg 8 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel MO... See More ⇒

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VBZA9936

VBZA9926 www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.015at VGS = 10 V 8 TrenchFET Power MOSFET 20 0.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5 Top... See More ⇒

 8.3. Size:1779K  cn vbsemi
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VBZA9936

VBZA9926A www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.020 at VGS = 10 V 5.8 TrenchFET Power MOSFET 20 0.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5 ... See More ⇒

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Detailed specifications: VBZA7240, VBZA7470, VBZA8858, VBZA9358, VBZA9410, VBZA9435, VBZA9926, VBZA9926A, 5N65, VBZA9945, VBZB8205A, VBZC8205A, VBZC8205B, VBZC8810, VBZE04N03, VBZE06N02, VBZE06N03

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