FDC604P Specs and Replacement
Type Designator: FDC604P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ -
Output Capacitance: 530 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SSOT6
- MOSFET ⓘ Cross-Reference Search
FDC604P datasheet
..1. Size:90K fairchild semi
fdc604p.pdf 
January 2001 FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 5.5 A, 20 V. RDS(ON) = 33 m @ VGS = 4.5 V Fairchild s low voltage PowerTrench process. It has RDS(ON) = 43 m @ VGS = 2.5 V been optimized for battery power management RDS(ON) = 60 m @ VGS = 1.8 V applica... See More ⇒
..2. Size:202K onsemi
fdc604p.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.1. Size:211K fairchild semi
fdc6020c.pdf 
November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Q1 4.2 A, 20V. RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 82 m @ VGS = 2.5 V process that has been especially tailored to minimize Q2 5.9 A, 20V. RDS(ON) = 27 m @ VGS... See More ⇒
9.2. Size:144K fairchild semi
fdc608pz.pdf 
June 2006 tm FDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.8 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 43 m @ VGS = 2.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and ye... See More ⇒
9.3. Size:62K fairchild semi
fdc602p f095.pdf 
April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GS gate version of Fairchild s advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of ... See More ⇒
9.4. Size:154K fairchild semi
fdc606p.pdf 
December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 6 A, 12 V. RDS(ON) = 26 m @ VGS = 4.5 V Fairchild s low voltage PowerTrench process. It has RDS(ON) = 35 m @ VGS = 2.5 V been optimized for battery power management RDS(ON) = 53 m @ VGS = 1.8 V... See More ⇒
9.5. Size:65K fairchild semi
fdc602p.pdf 
April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GS gate version of Fairchild s advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of ... See More ⇒
9.6. Size:174K fairchild semi
fdc6000nz.pdf 
June 2004 FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged 6.5 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V gate version of Fairchild's Semiconductor s advanced RDS(ON) = 28 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide ran... See More ⇒
9.7. Size:244K fairchild semi
fdc6036p.pdf 
February 2009 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses 5 A, 20 V. RDS(ON) = 44 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 64 m @ VGS = 2.5 V Packaged in FLMP SSOT-6, the RDS(ON) and thermal RDS(ON) = 95 m @ VGS = 1.8 V... See More ⇒
9.8. Size:270K onsemi
fdc606p.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.9. Size:212K tysemi
fdc6020c kdc6020c.pdf 
SMD Type SMD Type SMD Type SMD Type MOSFET MOSFET Product specification KDC6020C(FDC6020C) ( ) SOT-23-6 Unit mm Features N-Channel VDS=20V ID=5.9A RDS(ON) 27m (VGS = 4.5V) 6 5 4 DS(ON) GS R 39m (V = 2.5V) DS D P-Channel V =-20V I =-4.2A 0to0.1 RDS(ON) 55m (VGS =-4.5V) DS(ON) GS R 82m (V =-2.5V) 1 2 ... See More ⇒
9.10. Size:877K cn vbsemi
fdc602p.pdf 
FDC602P www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Cha... See More ⇒
Detailed specifications: FDC3601N
, STU307S
, FDC3612
, STU3055L
, FDC365P
, FDC5614P
, FDC5661N-F085
, FDC602P
, 50N06
, FDC606P
, FDC608PZ
, FDC610PZ
, FDC6310P
, FDC6312P
, FDC6318P
, FDC6320C
, STU303S
.
Keywords - FDC604P MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.