January 2001FDC604PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET uses 5.5 A, 20 V. RDS(ON) = 33 m @ VGS = 4.5 VFairchilds low voltage PowerTrench process. It hasRDS(ON) = 43 m @ VGS = 2.5 Vbeen optimized for battery power managementRDS(ON) = 60 m @ VGS = 1.8 Vapplica

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Q1 4.2 A, 20V. RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 82 m @ VGS = 2.5 V process that has been especially tailored to minimize Q2 5.9 A, 20V. RDS(ON) = 27 m @ VGS

June 2006tmFDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.8 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V using Fairchild Semiconductors advanced RDS(ON) = 43 m @ VGS = 2.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and ye

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GSgate version of Fairchilds advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GSprocess. It has been optimized for power management applications with a wide range of

December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 6 A, 12 V. RDS(ON) = 26 m @ VGS = 4.5 V Fairchilds low voltage PowerTrench process. It has RDS(ON) = 35 m @ VGS = 2.5 V been optimized for battery power management RDS(ON) = 53 m @ VGS = 1.8 V

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GSgate version of Fairchilds advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GSprocess. It has been optimized for power management applications with a wide range of

June 2004 FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged 6.5 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V gate version of Fairchild's Semiconductors advanced RDS(ON) = 28 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide ran

February 2009 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses 5 A, 20 V. RDS(ON) = 44 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 64 m @ VGS = 2.5 V Packaged in FLMP SSOT-6, the RDS(ON) and thermal RDS(ON) = 95 m @ VGS = 1.8 V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD TypeSMD TypeSMD TypeSMD TypeMOSFETMOSFETProduct specification KDC6020C(FDC6020C)( )SOT-23-6Unit: mm Features N-Channel VDS=20V ID=5.9A RDS(ON) 27m (VGS = 4.5V)6 5 4DS(ON) GS R 39m (V = 2.5V)DS D P-ChannelV =-20V I =-4.2A0to0.1 RDS(ON) 55m (VGS =-4.5V)DS(ON) GS R 82m (V =-2.5V)1 2

FDC602Pwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Cha