FDC604P datasheet, подбор замены

 ..1. Size:90K  fairchild semi
 fdc604p.pdf 

January 2001 FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 5.5 A, 20 V. RDS(ON) = 33 m @ VGS = 4.5 V Fairchild s low voltage PowerTrench process. It has RDS(ON) = 43 m @ VGS = 2.5 V been optimized for battery power management RDS(ON) = 60 m @ VGS = 1.8 V applica

 ..2. Size:202K  onsemi
 fdc604p.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:211K  fairchild semi
 fdc6020c.pdf 

November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Q1 4.2 A, 20V. RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 82 m @ VGS = 2.5 V process that has been especially tailored to minimize Q2 5.9 A, 20V. RDS(ON) = 27 m @ VGS

 9.2. Size:144K  fairchild semi
 fdc608pz.pdf 

June 2006 tm FDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.8 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 43 m @ VGS = 2.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and ye

 9.3. Size:62K  fairchild semi
 fdc602p f095.pdf 

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GS gate version of Fairchild s advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of

 9.4. Size:154K  fairchild semi
 fdc606p.pdf 

December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 6 A, 12 V. RDS(ON) = 26 m @ VGS = 4.5 V Fairchild s low voltage PowerTrench process. It has RDS(ON) = 35 m @ VGS = 2.5 V been optimized for battery power management RDS(ON) = 53 m @ VGS = 1.8 V

 9.5. Size:65K  fairchild semi
 fdc602p.pdf 

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GS gate version of Fairchild s advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of

 9.6. Size:174K  fairchild semi
 fdc6000nz.pdf 

June 2004 FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged 6.5 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V gate version of Fairchild's Semiconductor s advanced RDS(ON) = 28 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide ran

 9.7. Size:244K  fairchild semi
 fdc6036p.pdf 

February 2009 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses 5 A, 20 V. RDS(ON) = 44 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 64 m @ VGS = 2.5 V Packaged in FLMP SSOT-6, the RDS(ON) and thermal RDS(ON) = 95 m @ VGS = 1.8 V

 9.8. Size:270K  onsemi
 fdc606p.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.9. Size:212K  tysemi
 fdc6020c kdc6020c.pdf 

SMD Type SMD Type SMD Type SMD Type MOSFET MOSFET Product specification KDC6020C(FDC6020C) ( ) SOT-23-6 Unit mm Features N-Channel VDS=20V ID=5.9A RDS(ON) 27m (VGS = 4.5V) 6 5 4 DS(ON) GS R 39m (V = 2.5V) DS D P-Channel V =-20V I =-4.2A 0to0.1 RDS(ON) 55m (VGS =-4.5V) DS(ON) GS R 82m (V =-2.5V) 1 2

 9.10. Size:877K  cn vbsemi
 fdc602p.pdf 

FDC602P www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Cha