All MOSFET. VBZE30N02 Datasheet

 

VBZE30N02 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZE30N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.5(min) V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 100(max) nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1725 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004(typ) Ohm
   Package: TO252

 VBZE30N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZE30N02 Datasheet (PDF)

 ..1. Size:2034K  cn vbsemi
 vbze30n02.pdf

VBZE30N02 VBZE30N02

VBZE30N02www.VBsemi.comN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004 at VGS = 4.5 V 13020 90 nC0.006at VGS = 2.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

 6.1. Size:2059K  cn vbsemi
 vbze30n06.pdf

VBZE30N02 VBZE30N02

VBZE30N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested220.073at VGS = 10 V Material categorization:60 19.8For definitions of compliance please see0.097 at VGS = 4.5 V 16TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor D

 6.2. Size:2693K  cn vbsemi
 vbze30n03.pdf

VBZE30N02 VBZE30N02

VBZE30N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.015at VGS = 10 V 3530 28nC0.025at VGS = 4.5 V 30APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU

 7.1. Size:1869K  cn vbsemi
 vbze30n10.pdf

VBZE30N02 VBZE30N02

VBZE30N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature1000.030 at VGS = 10 V 35RoHS* Low Thermal Resistance PackageCOMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParame

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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