All MOSFET. VBZE30N03 Datasheet

 

VBZE30N03 Datasheet and Replacement


   Type Designator: VBZE30N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 525(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015(typ) Ohm
   Package: TO252
 

 VBZE30N03 substitution

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VBZE30N03 Datasheet (PDF)

 ..1. Size:2693K  cn vbsemi
vbze30n03.pdf pdf_icon

VBZE30N03

VBZE30N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.015at VGS = 10 V 3530 28nC0.025at VGS = 4.5 V 30APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU

 6.1. Size:2034K  cn vbsemi
vbze30n02.pdf pdf_icon

VBZE30N03

VBZE30N02www.VBsemi.comN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004 at VGS = 4.5 V 13020 90 nC0.006at VGS = 2.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

 6.2. Size:2059K  cn vbsemi
vbze30n06.pdf pdf_icon

VBZE30N03

VBZE30N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested220.073at VGS = 10 V Material categorization:60 19.8For definitions of compliance please see0.097 at VGS = 4.5 V 16TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor D

 7.1. Size:1869K  cn vbsemi
vbze30n10.pdf pdf_icon

VBZE30N03

VBZE30N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature1000.030 at VGS = 10 V 35RoHS* Low Thermal Resistance PackageCOMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParame

Datasheet: VBZE20N06 , VBZE20N10 , VBZE20N20 , VBZE20P03 , VBZE20P06 , VBZE2810 , VBZE2N60 , VBZE30N02 , K2611 , VBZE30N06 , VBZE30N10 , VBZE40N03 , VBZE40N06 , VBZE40N10 , VBZE40P03 , VBZE40P06 , VBZE40P10 .

History: 3N40 | DMG8880LSS | SQM90142E | CS65N20-30 | C3M0065100K | IPB120N08S4-03 | IXFV110N10P

Keywords - VBZE30N03 MOSFET datasheet

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