VBZFB40P03 Specs and Replacement

Type Designator: VBZFB40P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm

Package: TO251

VBZFB40P03 substitution

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VBZFB40P03 datasheet

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VBZFB40P03

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VBZFB40P03

VBZFB40P04 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET FEATURES -40 V Halogen-free According to IEC 61249-2-21 VDS Definition RDS(on),typ VGS=10V 10 m TrenchFET Power MOSFET RDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC -55 A ID APPLICATIONS Power Switch DC/DC Converters S TO-251 G D G D S Top View... See More ⇒

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VBZFB40P03

VBZFB40P06 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES -60 V VDS Halogen-free According to IEC 61249-2-21 RDS(on),typ VGS=10V 48 m Definition TrenchFET Power MOSFET 57 RDS(on),typ VGS=4.5V m 100 % UIS Tested A ID -30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Converter TO-251 DC/DC Converter for... See More ⇒

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VBZFB40P03

VBZFB40N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.032 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.036 100 % Rg and UIS Tested ID (A) 25 Compliant to RoHS Directive 2002/95/EC Configuration Single APPLICATIONS Power Supply - S... See More ⇒

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Detailed specifications: VBZFB12P10, VBZFB15N10, VBZFB20N06, VBZFB20P06, VBZFB30N06, VBZFB40N03, VBZFB40N06, VBZFB40N10, IRFP260N, VBZFB40P04, VBZFB40P06, VBZFB50N03, VBZFB50N06, VBZFB60N03, VBZFB70N03, VBZFB80N03, VBZJ12N06

Keywords - VBZFB40P03 MOSFET specs

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