All MOSFET. FDC6312P Datasheet

 

FDC6312P Datasheet and Replacement


   Type Designator: FDC6312P
   Marking Code: .312'
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.4 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: SSOT6
 
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FDC6312P Datasheet (PDF)

 ..1. Size:88K  fairchild semi
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FDC6312P

January 2001FDC6312PDual P-Channel 1.8V PowerTrench Specified MOSFETGeneral Description FeaturesThese P-Channel 1.8V specified MOSFETs are 2.3 A, 20 V. RDS(ON) = 115 m @ VGS = 4.5 Vproduced using Fairchild Semiconductor's advancedRDS(ON) = 155 m @ VGS = 2.5 VPowerTrench process that has been especially tailoredRDS(ON) = 225 m @ VGS =

 ..2. Size:204K  onsemi
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FDC6312P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:896K  cn vbsemi
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FDC6312P

FDC6312Pwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Ap

 8.1. Size:69K  fairchild semi
fdc6310p.pdf pdf_icon

FDC6312P

April 2001 FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are 2.2 A, 20 V. R = 125 m @ V = 4.5 V DS(ON) GSproduced using Fairchild Semiconductor's advanced R = 190 m @ V = 2.5 V DS(ON) GSPowerTrench process that has been especially tailored to minimize on-state resistance

Datasheet: FDC5614P , FDC5661N-F085 , FDC602P , FDC604P , FDC606P , FDC608PZ , FDC610PZ , FDC6310P , IRF640N , FDC6318P , FDC6320C , STU303S , FDC6321C , STU3030NLS , FDC6327C , STU17L01 , FDC6333C .

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