FDC6312P Specs and Replacement
Type Designator: FDC6312P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: SSOT6
FDC6312P substitution
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FDC6312P datasheet
fdc6312p.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdc6312p.pdf
FDC6312P www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET - 20 2.7 nC 0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Ap... See More ⇒
fdc6310p.pdf
April 2001 FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are 2.2 A, 20 V. R = 125 m @ V = 4.5 V DS(ON) GS produced using Fairchild Semiconductor's advanced R = 190 m @ V = 2.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize on-state resistance ... See More ⇒
Detailed specifications: FDC5614P , FDC5661N-F085 , FDC602P , FDC604P , FDC606P , FDC608PZ , FDC610PZ , FDC6310P , IRLZ44N , FDC6318P , FDC6320C , STU303S , FDC6321C , STU3030NLS , FDC6327C , STU17L01 , FDC6333C .
Keywords - FDC6312P MOSFET specs
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