VBZL120N08 Specs and Replacement
Type Designator: VBZL120N08
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 750 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO263
VBZL120N08 substitution
- MOSFET ⓘ Cross-Reference Search
VBZL120N08 datasheet
vbzl120n08.pdf
VBZL120N08 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) New Package with Low Thermal Resistance 100 0.005 at VGS = 10 V 110a 100 % Rg Tested D D2PAK (TO-263) G D S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Vo... See More ⇒
vbzl150n03.pdf
VBZL150N03 www.VBsemi.com N-Channel 150V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS 150 175 C Junction Temperature V New Low Thermal Resistance Package RDS(on) VGS = 10 V 35 m PWM Optimized ID 55 A Compliant to RoHS Directive 2002/95/EC Configuration Single APPLICATIONS Primary Side Switch D D2PAK (TO-263) G D G S S N-... See More ⇒
vbzl100n04.pdf
VBZL100N04 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS 100 V 175 C Junction Temperature RoHS RDS(on) VGS = 10 V 100 m COMPLIANT Low Thermal Resistance Package RDS(on) VGS = 4.5 V 106 m 100 % Rg Tested ID 20 A Configuration Single APPLICATIONS Isolated DC/DC Converters D D2PAK (TO-263) G D... See More ⇒
Detailed specifications: VBZFB40P06, VBZFB50N03, VBZFB50N06, VBZFB60N03, VBZFB70N03, VBZFB80N03, VBZJ12N06, VBZL100N04, 7N65, VBZL150N03, VBZL30N06, VBZL45N03, VBZL50N06, VBZL60N03, VBZL60N06, VBZL70N03, VBZL80N03
Keywords - VBZL120N08 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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