VBZM12P10
MOSFET. Datasheet pdf. Equivalent
Type Designator: VBZM12P10
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 11.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 67
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 330
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.167(typ)
Ohm
Package:
TO220AB
VBZM12P10
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBZM12P10
Datasheet (PDF)
..1. Size:841K cn vbsemi
vbzm12p10.pdf 
VBZM12P10www.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS -100VDefinitionRDS(on) VGS = 10 V 167 m TrenchFET Power MOSFET 100 % Rg and UIS TestedRDS(on) VGS = 4.5 V 178 m Compliant to RoHS Directive 2002/95/ECID -18AConfiguration SingleAPPLICATIONS Power Switch Load Switch
8.1. Size:1289K cn vbsemi
vbzm120n15.pdf
VBZM120N15www.VBsemi.comN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n
9.1. Size:984K cn vbsemi
vbzm100n04.pdf
VBZM100N04www.VBsemi.comN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS TrenchFET Power MOSFET40 VRDS(on) VGS = 10 V 2 100 % Rg and UIS TestedmRoHSID 180ACOMPLIANT APPLICATIONSConfiguration Single Synchronous Rectification Power SuppliesTO-220ABDGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS TA = 25 C, unless ot
9.2. Size:781K cn vbsemi
vbzm100n03.pdf
VBZM100N03www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.001 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.002 Package with Low Thermal ResistanceID (A) 260 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 20
9.3. Size:1125K cn vbsemi
vbzm13n50.pdf
VBZM13N50www.VBsemi.comN hannel 500 D S Power MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500ReqirementsRDS(on) ()VGS = 10 V 0.660 Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81RuggednessQgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguration Single Complian
9.4. Size:1809K cn vbsemi
vbzm18n20.pdf
VBZM18N20www.VBsemi.comN-Channel 200 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) 200 TrenchFET Power MOSFETRDS(on) ()VGS = 10 V0.91 175 C Junction TemperatureQg (Max.) (nC) 13 PWM Optimized 100 % Rg TestedQgs (nC) 3.0 Compliant to RoHS Directive 2002/95/ECQgd (nC) 7.9Configuration SingleAPPLICATIONS Primary Side SwitchTO-220AB DG
9.5. Size:1256K cn vbsemi
vbzm150n03.pdf
VBZM150N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V)30 DT-Trench Power MOSFET 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0020 Compliant to RoHS Directive 2011/65/EURDS(on) () at VGS = 4.5 V 0.0028ID (A) 140APPLICATIONSConfiguration Single OR-ingTO-220AB Server DC/DCDGSG D SN-Channel MOS
9.6. Size:637K cn vbsemi
vbzm150n10.pdf
VBZM150N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.127at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M
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