VBZM12P10 Specs and Replacement

Type Designator: VBZM12P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 11.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.167 typ Ohm

Package: TO220AB

VBZM12P10 substitution

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VBZM12P10 datasheet

 ..1. Size:841K  cn vbsemi
vbzm12p10.pdf pdf_icon

VBZM12P10

VBZM12P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS -100 V Definition RDS(on) VGS = 10 V 167 m TrenchFET Power MOSFET 100 % Rg and UIS Tested RDS(on) VGS = 4.5 V 178 m Compliant to RoHS Directive 2002/95/EC ID -18 A Configuration Single APPLICATIONS Power Switch Load Switch ... See More ⇒

 8.1. Size:1289K  cn vbsemi
vbzm120n15.pdf pdf_icon

VBZM12P10

VBZM120N15 www.VBsemi.com N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 150 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.075 100 % Rg and UIS tested ID (A) 20 Configuration Single Package TO-220 TO-220AB D G S S N-Channel MOSFET D G Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n... See More ⇒

 9.1. Size:984K  cn vbsemi
vbzm100n04.pdf pdf_icon

VBZM12P10

VBZM100N04 www.VBsemi.com N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS TrenchFET Power MOSFET 40 V RDS(on) VGS = 10 V 2 100 % Rg and UIS Tested m RoHS ID 180 A COMPLIANT APPLICATIONS Configuration Single Synchronous Rectification Power Supplies TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless ot... See More ⇒

 9.2. Size:781K  cn vbsemi
vbzm100n03.pdf pdf_icon

VBZM12P10

VBZM100N03 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 30 Definition RDS(on) ( ) at VGS = 10 V 0.001 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.002 Package with Low Thermal Resistance ID (A) 260 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 20... See More ⇒

Detailed specifications: VBZL70N03, VBZL80N03, VBZL80N04, VBZL80N06, VBZL80N08, VBZM100N03, VBZM100N04, VBZM120N15, SPP20N60C3, VBZM13N50, VBZM150N03, VBZM150N10, VBZM18N20, VBZM20N10, VBZM20P06, VBZM30N06, VBZM3710

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.