VBZM30N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBZM30N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 66(max) nC
trⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 920 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024(typ) Ohm
Package: TO220AB
VBZM30N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBZM30N06 Datasheet (PDF)
vbzm30n06.pdf
VBZM30N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Surface Mount0.024 at VGS = 10 V 50 Available in Tape and Reel600.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Directive 2002/95/EC
vbzm3710.pdf
VBZM3710www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) 100Available 175 C Junction TemperatureRDS(on) () at VGS = 10 V 0.036RoHS* Low Thermal Resistance PackageaCOMPLIANTID (A) 55 (Configuration SingleDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, u
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
